N-channel transistor STF13NM60N, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V

N-channel transistor STF13NM60N, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V

Quantity
Unit price
1-4
2.45$
5-24
2.13$
25-49
1.92$
50-99
1.78$
100+
1.58$
Quantity in stock: 110

N-channel transistor STF13NM60N, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 790pF. Channel type: N. Cost): 60pF. Drain-source protection: yes. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 52A. Marking on the case: 13NM60N. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54

Technical documentation (PDF)
STF13NM60N
32 parameters
ID (T=100°C)
8.2A
ID (T=25°C)
11A
Idss (max)
100uA
On-resistance Rds On
0.28 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
790pF
Channel type
N
Cost)
60pF
Drain-source protection
yes
Function
HIGH dv/dt, Low Gate Capacitance
G-S Protection
no
Gate/source voltage Vgs
25V
IDss (min)
1uA
Id(imp)
52A
Marking on the case
13NM60N
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
25W
Quantity per case
1
RoHS
yes
Td(off)
30 ns
Td(on)
3 ns
Technology
MDmesh™ II Power MOSFET
Temperature
+150°C
Trr Diode (Min.)
300 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Stmicroelectronics