N-channel transistor STD5N52K3, 2.77A, 4.4A, 50uA, 1.2 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.77A. ID (T=25°C): 4.4A. Idss (max): 50uA. On-resistance Rds On: 1.2 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. Assembly/installation: surface-mounted component (SMD). C(in): 545pF. Channel type: N. Cost): 45pF. Drain-source protection: yes. Function: Switching applications, Gate charge minimized, Low IDSS. G-S Protection: yes. Gate/source voltage Vgs: 30V. IDss (min): 5uA. Id(imp): 17.6A. Marking on the case: 5N52K3. Number of channels: 1. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 70W. Quantity per case: 1. Spec info: Enhancement type. Td(off): 29 ns. Td(on): 9 ns. Technology: SuperMESH3™ Power MOSFET. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54