N-channel transistor STD3NK80Z-1, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V

N-channel transistor STD3NK80Z-1, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V

Quantity
Unit price
1-4
1.23$
5-49
1.02$
50-99
0.86$
100+
0.78$
Quantity in stock: 97

N-channel transistor STD3NK80Z-1, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. On-resistance Rds On: 3.8 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 485pF. Channel type: N. Conditioning unit: 75. Conditioning: plastic tube. Cost): 57pF. Drain-source protection: zener diode. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 10A. Marking on the case: D3NK80Z. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 70W. Quantity per case: 1. RoHS: yes. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54

Technical documentation (PDF)
STD3NK80Z-1
32 parameters
ID (T=100°C)
1.57A
ID (T=25°C)
2.5A
Idss (max)
50mA
On-resistance Rds On
3.8 Ohms
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251 ( I-Pak )
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
485pF
Channel type
N
Conditioning unit
75
Conditioning
plastic tube
Cost)
57pF
Drain-source protection
zener diode
Function
HIGH Current, HIGH Speed Switching
G-S Protection
yes
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
10A
Marking on the case
D3NK80Z
Number of terminals
2
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
70W
Quantity per case
1
RoHS
yes
Td(off)
36ns
Td(on)
17 ns
Technology
Zener-protected SuperMESH™ Power MOSFET
Trr Diode (Min.)
384 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics