N-channel transistor STD13NM60N, 6.93A, 11A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ), 650V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ). Voltage Vds(max): 650V. Assembly/installation: surface-mounted component (SMD). C(in): 790pF. Channel type: N. Cost): 70pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 44A. Marking on the case: 13NM60N. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 90W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54