N-channel transistor STD10NF10, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V

N-channel transistor STD10NF10, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V

Quantity
Unit price
1-4
0.96$
5-24
0.82$
25-49
0.72$
50-99
0.65$
100+
0.56$
Quantity in stock: 107

N-channel transistor STD10NF10, 9A, 13A, 10uA, 0.115 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.115 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 470pF. Channel type: N. Cost): 70pF. Drain-source protection: yes. Function: SWITCHING APPLICATION. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 52A. Marking on the case: D10NF10. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Td(off): 32 ns. Td(on): 16 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54

Technical documentation (PDF)
STD10NF10
29 parameters
ID (T=100°C)
9A
ID (T=25°C)
13A
Idss (max)
10uA
On-resistance Rds On
0.115 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( D-PAK )
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
470pF
Channel type
N
Cost)
70pF
Drain-source protection
yes
Function
SWITCHING APPLICATION
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
52A
Marking on the case
D10NF10
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Td(off)
32 ns
Td(on)
16 ns
Technology
Low gate charge STRipFET™ II Power MOSFET
Trr Diode (Min.)
90 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Stmicroelectronics