N-channel transistor SSS7N60A, 2.5A, 4A, 250uA, 1.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 250uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1150pF. Channel type: N. Cost): 130pF. Drain-source protection: diode. Function: N MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 28A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 48W. Quantity per case: 1. Td(off): 72 ns. Td(on): 18 ns. Technology: Power-MOSFET (F). Trr Diode (Min.): 415 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Samsung. Quantity in stock updated on 10/31/2025, 06:54