N-channel transistor SQ2348ES-T1_GE3, SOT-23, MS-012, 30 v
Quantity
Unit price
1-99
1.12$
100+
0.82$
| Quantity in stock: 5853 |
N-channel transistor SQ2348ES-T1_GE3, SOT-23, MS-012, 30 v. Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 540pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ 8A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: -. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 3W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 32 ns. Switch-on time ton [nsec.]: 7 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 20:19
SQ2348ES-T1_GE3
16 parameters
Housing
SOT-23
Housing (JEDEC standard)
MS-012
Drain-source voltage Uds [V]
30 v
Ciss Gate Capacitance [pF]
540pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
8A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.032 Ohms @ 8A
Gate breakdown voltage Ugs [V]
2V
Max temperature
+175°C.
Maximum dissipation Ptot [W]
3W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
32 ns
Switch-on time ton [nsec.]
7 ns
Original product from manufacturer
Vishay (siliconix)