N-channel transistor SPW20N60C3, TO-247, 650V. Housing: TO-247. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 650V. Ciss Gate Capacitance [pF]: 2400pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 20.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.19 Ohms @ 13.1A. Gate breakdown voltage Ugs [V]: 3.9V. Manufacturer's marking: 20N60C3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 208W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 100 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 22:25