N-channel transistor SPW11N80C3, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1600pF. Channel type: N. Cost): 800pF. Drain-source protection: yes. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 33A. Marking on the case: 11N80C3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 156W. Quantity per case: 1. RoHS: yes. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33