N-channel transistor SPP11N60C3, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 1200pF. Channel type: N. Cost): 390pF. Drain-source protection: zener diode. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.1uA. Id(imp): 33A. Marking on the case: 11N60C3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool Mos POWER trafnsistor. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33