N-channel transistor SPP07N60S5, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 600V

N-channel transistor SPP07N60S5, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 600V

Quantity
Unit price
1-4
2.94$
5-24
2.56$
25-49
2.31$
50+
2.06$
Equivalence available
Quantity in stock: 72

N-channel transistor SPP07N60S5, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 30pF. Channel type: N. Cost): 55pF. Drain-source protection: zener diode. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 14.6A. Marking on the case: 07N60S5. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 83W. Production date: 2015/05. Quantity per case: 1. RoHS: yes. Spec info: COOL MOS TRANSISTOR. Td(off): 170 ns. Td(on): 120ns. Technology: Cool MOS™ Power Transistor. Trr Diode (Min.): 750 ns. Type of transistor: MOSFET. Vgs(th) max.: 5.5V. Vgs(th) min.: 3.5V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33

Technical documentation (PDF)
SPP07N60S5
33 parameters
ID (T=100°C)
4.6A
ID (T=25°C)
7.3A
Idss (max)
100uA
On-resistance Rds On
0.54 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
30pF
Channel type
N
Cost)
55pF
Drain-source protection
zener diode
Function
'Extreme dv/dt rated Ultra low effective capacitance'
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.5uA
Id(imp)
14.6A
Marking on the case
07N60S5
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
83W
Production date
2015/05
Quantity per case
1
RoHS
yes
Spec info
COOL MOS TRANSISTOR
Td(off)
170 ns
Td(on)
120ns
Technology
Cool MOS™ Power Transistor
Trr Diode (Min.)
750 ns
Type of transistor
MOSFET
Vgs(th) max.
5.5V
Vgs(th) min.
3.5V
Original product from manufacturer
Infineon Technologies

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