N-channel transistor SPP06N80C3, 3.8A, 6A, 50uA, 0.78 Ohms, TO-220, TO-220-3-1, 800V

N-channel transistor SPP06N80C3, 3.8A, 6A, 50uA, 0.78 Ohms, TO-220, TO-220-3-1, 800V

Quantity
Unit price
1-4
2.95$
5-24
2.58$
25-49
2.36$
50-99
2.21$
100+
1.97$
Quantity in stock: 21

N-channel transistor SPP06N80C3, 3.8A, 6A, 50uA, 0.78 Ohms, TO-220, TO-220-3-1, 800V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 785pF. Channel type: N. Cost): 33pF. Drain-source protection: diode. Function: Ultra low gate charge Extreme dv/dt rated. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 18A. Marking on the case: 06N80C3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 83W. Quantity per case: 1. RoHS: yes. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33

Technical documentation (PDF)
SPP06N80C3
30 parameters
ID (T=100°C)
3.8A
ID (T=25°C)
6A
Idss (max)
50uA
On-resistance Rds On
0.78 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220-3-1
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
785pF
Channel type
N
Cost)
33pF
Drain-source protection
diode
Function
Ultra low gate charge Extreme dv/dt rated
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
10uA
Id(imp)
18A
Marking on the case
06N80C3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
83W
Quantity per case
1
RoHS
yes
Td(off)
72 ns
Td(on)
25 ns
Technology
Cool MOS™ Power Transistor
Trr Diode (Min.)
520 ns
Type of transistor
MOSFET
Vgs(th) min.
2.1V
Original product from manufacturer
Infineon Technologies