N-channel transistor SPP04N60C3, 2.8A, 4.5A, 50uA, 85m Ohms, TO-220, TO-220-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 85m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 490pF. Channel type: N. Cost): 160pF. Drain-source protection: yes. Function: Ultra Low Gate Charge High Peak Current Capability. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 13.5A. Marking on the case: 04N60C3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Spec info: Exceptional dv/dt capability. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33