N-channel transistor SPD09N05, 6.5A, 9.2A, 100uA, 0.093 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 55V

N-channel transistor SPD09N05, 6.5A, 9.2A, 100uA, 0.093 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 55V

Quantity
Unit price
1-4
1.08$
5-49
0.89$
50-99
0.75$
100+
0.68$
Quantity in stock: 455

N-channel transistor SPD09N05, 6.5A, 9.2A, 100uA, 0.093 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 55V. ID (T=100°C): 6.5A. ID (T=25°C): 9.2A. Idss (max): 100uA. On-resistance Rds On: 0.093 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 215pF. Channel type: N. Cost): 75pF. Function: dv/dt rated Enhancement mode. Gate/source voltage Vgs: 20V. IDss (min): 0.1uA. Id(imp): 37A. Marking on the case: SPD09N05. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 24W. Quantity per case: 1. Td(off): 30 ns. Td(on): 15 ns. Technology: SIPMOS Power-Transistor. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33

Technical documentation (PDF)
SPD09N05
27 parameters
ID (T=100°C)
6.5A
ID (T=25°C)
9.2A
Idss (max)
100uA
On-resistance Rds On
0.093 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
215pF
Channel type
N
Cost)
75pF
Function
dv/dt rated Enhancement mode
Gate/source voltage Vgs
20V
IDss (min)
0.1uA
Id(imp)
37A
Marking on the case
SPD09N05
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
24W
Quantity per case
1
Td(off)
30 ns
Td(on)
15 ns
Technology
SIPMOS Power-Transistor
Trr Diode (Min.)
50 ns
Type of transistor
MOSFET
Vgs(th) min.
2.1V
Original product from manufacturer
Infineon Technologies