N-channel transistor SPA16N50C3, 10A, 16A, 100uA, 0.25 Ohms, TO-220FP, TO-220FP, 560V

N-channel transistor SPA16N50C3, 10A, 16A, 100uA, 0.25 Ohms, TO-220FP, TO-220FP, 560V

Quantity
Unit price
1-4
4.80$
5-24
4.32$
25-49
3.95$
50-99
3.63$
100+
3.19$
Quantity in stock: 50

N-channel transistor SPA16N50C3, 10A, 16A, 100uA, 0.25 Ohms, TO-220FP, TO-220FP, 560V. ID (T=100°C): 10A. ID (T=25°C): 16A. Idss (max): 100uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 560V. Assembly/installation: PCB through-hole mounting. C(in): 1600pF. Channel type: N. Cost): 800pF. Drain-source protection: yes. Function: Exceptional dv/dt capability. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.1uA. Id(imp): 48A. Marking on the case: 16N50C3. Note: Fully isolated package (2500VAC /1 minute). Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 34W. Quantity per case: 1. RoHS: yes. Spec info: capacités effectives ultra faibles. Td(off): 50 ns. Td(on): 10 ns. Technology: Cool MOS™ Power Transistor. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33

SPA16N50C3
33 parameters
ID (T=100°C)
10A
ID (T=25°C)
16A
Idss (max)
100uA
On-resistance Rds On
0.25 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
560V
Assembly/installation
PCB through-hole mounting
C(in)
1600pF
Channel type
N
Cost)
800pF
Drain-source protection
yes
Function
Exceptional dv/dt capability
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.1uA
Id(imp)
48A
Marking on the case
16N50C3
Note
Fully isolated package (2500VAC /1 minute)
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
34W
Quantity per case
1
RoHS
yes
Spec info
capacités effectives ultra faibles
Td(off)
50 ns
Td(on)
10 ns
Technology
Cool MOS™ Power Transistor
Trr Diode (Min.)
420 ns
Type of transistor
MOSFET
Vgs(th) max.
3.9V
Vgs(th) min.
2.1V
Original product from manufacturer
Infineon Technologies