N-channel transistor SPA07N60C3XKSA1, ITO-220 (PG-TO220FP), 650V
Quantity
Unit price
1-9
3.60$
10+
2.99$
| Quantity in stock: 85 |
N-channel transistor SPA07N60C3XKSA1, ITO-220 (PG-TO220FP), 650V. Housing: ITO-220 (PG-TO220FP). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 650V. Ciss Gate Capacitance [pF]: 790pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 7.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 4.6A. Gate breakdown voltage Ugs [V]: 3.9V. Manufacturer's marking: 07N60C3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 32W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 60 ns. Switch-on time ton [nsec.]: 6 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 19:02
SPA07N60C3XKSA1
16 parameters
Housing
ITO-220 (PG-TO220FP)
Drain-source voltage Uds [V]
650V
Ciss Gate Capacitance [pF]
790pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
7.3A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.6 Ohms @ 4.6A
Gate breakdown voltage Ugs [V]
3.9V
Manufacturer's marking
07N60C3
Max temperature
+150°C.
Maximum dissipation Ptot [W]
32W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
60 ns
Switch-on time ton [nsec.]
6 ns
Original product from manufacturer
Infineon