N-channel transistor SPA07N60C3, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V

N-channel transistor SPA07N60C3, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V

Quantity
Unit price
1-4
2.51$
5-24
2.29$
25-49
2.12$
50-99
1.96$
100+
1.67$
Equivalence available
Quantity in stock: 153

N-channel transistor SPA07N60C3, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 790pF. Channel type: N. Cost): 260pF. Drain-source protection: zener diode. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.5uA. Id(imp): 21.9A. Marking on the case: 07N60C3. Note: Fully isolated package (2500VAC /1 minute). Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 32W. Quantity per case: 1. RoHS: yes. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33

Technical documentation (PDF)
SPA07N60C3
32 parameters
ID (T=100°C)
4.6A
ID (T=25°C)
7.3A
Idss (max)
100uA
On-resistance Rds On
0.54 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
650V
Assembly/installation
PCB through-hole mounting
C(in)
790pF
Channel type
N
Cost)
260pF
Drain-source protection
zener diode
Function
'Extreme dv/dt rated High peak current capability'
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.5uA
Id(imp)
21.9A
Marking on the case
07N60C3
Note
Fully isolated package (2500VAC /1 minute)
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
32W
Quantity per case
1
RoHS
yes
Td(off)
60 ns
Td(on)
6 ns
Technology
Cool MOS™ Power Transistor
Trr Diode (Min.)
400 ns
Type of transistor
MOSFET
Vgs(th) max.
3.9V
Vgs(th) min.
2.1V
Original product from manufacturer
Infineon Technologies

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