N-channel transistor SKW20N60, 20A, TO-247, TO-247 ( AC ), 600V

N-channel transistor SKW20N60, 20A, TO-247, TO-247 ( AC ), 600V

Quantity
Unit price
1-4
6.56$
5-9
5.96$
10-24
5.26$
25+
4.97$
Quantity in stock: 93

N-channel transistor SKW20N60, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 1100pF. CE diode: yes. Channel type: N. Collector current: 40A. Cost): 107pF. Function: Fast S-IGBT in NPT technology. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: -. Ic(pulse): 80A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 179W. RoHS: yes. Saturation voltage VCE(sat): 2.4V. Spec info: K20N60. Td(off): 445 ns. Td(on): 36ns. Trr Diode (Min.): 300 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:14

Technical documentation (PDF)
SKW20N60
25 parameters
Ic(T=100°C)
20A
Housing
TO-247
Housing (according to data sheet)
TO-247 ( AC )
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
1100pF
CE diode
yes
Channel type
N
Collector current
40A
Cost)
107pF
Function
Fast S-IGBT in NPT technology
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
5V
Gate/emitter voltage VGE
20V
Ic(pulse)
80A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
179W
RoHS
yes
Saturation voltage VCE(sat)
2.4V
Spec info
K20N60
Td(off)
445 ns
Td(on)
36ns
Trr Diode (Min.)
300 ns
Original product from manufacturer
Infineon Technologies