N-channel transistor SKM100GAR123D, 90A, other, other, 600V. Ic(T=100°C): 90A. Housing: other. Housing (according to data sheet): other. Collector/emitter voltage Vceo: 600V. Assembly/installation: -. C(in): 5000pF. CE diode: yes. Channel type: N. Collector current: 100A. Cost): 720pF. Function: High Power IGBT. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 150A. Note: Half Bridge IGBT MTP (Warp Speed 60-100KHz). Number of terminals: 7. Operating temperature: -55...+150°C. RoHS: yes. Saturation voltage VCE(sat): 2.3V. Spec info: Ic 114A @ 25°C, 50A @ 109°C, Icm 360A (pulsed). Td(off): 450 ns. Td(on): 30 ns. Original product from manufacturer: Semikron. Quantity in stock updated on 09/29/2025, 21:55