N-channel transistor SI9410BDY-E3, SO8, TO-263AB, 30 v. Housing: SO8. Housing (JEDEC standard): TO-263AB. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 1000pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 6.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.024 Ohms @ 8.1A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: SI9410BDY-E3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 45 ns. Switch-on time ton [nsec.]: 15 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 21:47