N-channel transistor SI4840BDY, 9.9A, 12.4A, 5uA, 0.0074 Ohms, SO, SO-8, 40V. ID (T=100°C): 9.9A. ID (T=25°C): 12.4A. Idss (max): 5uA. On-resistance Rds On: 0.0074 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 2000pF. Channel type: N. Cost): 260pF. Drain-source protection: no. G-S Protection: yes. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 50A. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 25 ns. Td(on): 25 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:14