N-channel transistor SI4532CDY-T1-GE3, SO8, 30V/-30V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30V/-30V. Ciss Gate Capacitance [pF]: 305/340pF. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 5.2A/-3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms/0.14 Ohms @ 5.2/-3.4A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Manufacturer's marking: SI4532CDY-T1-E3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.14W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 25/30 ns. Switch-on time ton [nsec.]: 11 ns/10 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 11/02/2025, 21:51