N-channel transistor SI4532ADY-T1-E3, SO8, MS-012, 30V/-30V. Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 30V/-30V. Ciss Gate Capacitance [pF]: 500pF. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 3.7A/-3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.053 Ohms/0.08 Ohms @ 4.9/-3.9A. Gate breakdown voltage Ugs [V]: 4.5V/-4.5V. Manufacturer's marking: SI4532ADY-T1-E3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.13W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 23/21 ns. Switch-on time ton [nsec.]: 12 ns/8 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 22:31