N-channel transistor SI4480EY, 5.2A, 6.2A, 20uA, 0.026 Ohms, SO, SO-8, 80V. ID (T=100°C): 5.2A. ID (T=25°C): 6.2A. Idss (max): 20uA. On-resistance Rds On: 0.026 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 80V. Assembly/installation: surface-mounted component (SMD). Channel type: N. Drain-source protection: yes. Function: Power MOSFET. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 40Ap. Number of terminals: 8. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 3W. Quantity per case: 1. Td(off): 52 ns. Td(on): 12.5 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Type of transistor: MOSFET. Vgs(th) max.: -. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:14