N-channel transistor SI4448DY-T1-E3, 26A, 32A, 10uA, 17m Ohms, SO, SO-8, 12V. ID (T=100°C): 26A. ID (T=25°C): 32A. Idss (max): 10uA. On-resistance Rds On: 17m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 12V. Assembly/installation: surface-mounted component (SMD). C(in): 12350pF. Channel type: N. Cost): 2775pF. Drain-source protection: diode. Function: Power MOSFET. G-S Protection: no. Gate/source voltage Vgs: 8V. IDss (min): 1uA. Id(imp): 70A. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 7.8W. Quantity per case: 1. Spec info: Id--40...50A t=10s with FR4 board. Td(off): 240 ns. Td(on): 38 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Trr Diode (Min.): 84 ns. Type of transistor: MOSFET. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:14