N-channel transistor SI4410BDY-E3, SO8, MS-012, 30 v
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| Quantity in stock: 15 |
N-channel transistor SI4410BDY-E3, SO8, MS-012, 30 v. Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 2000pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 7.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0135 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: SI4410BDY. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.4W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 40 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 23:16
SI4410BDY-E3
17 parameters
Housing
SO8
Housing (JEDEC standard)
MS-012
Drain-source voltage Uds [V]
30 v
Ciss Gate Capacitance [pF]
2000pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
7.5A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.0135 Ohms @ 10A
Gate breakdown voltage Ugs [V]
3V
Manufacturer's marking
SI4410BDY
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.4W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
40 ns
Switch-on time ton [nsec.]
10 ns
Original product from manufacturer
Vishay (siliconix)