N-channel transistor SI2306BDS-T1-E3, SOT23, 30V, 30 v. Housing: SOT23. Vdss (Drain to Source Voltage): 30V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 305pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 3.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.057 Ohms @ 2.8A. Features: -. Gate breakdown voltage Ugs [V]: 3V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 4A. Information: -. MSL: -. Manufacturer's marking: L6. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.8W. Mounting Type: SMD. Number of terminals: 3. Pd (Power Dissipation, Max): 1.25W. Polarity: MOSFET N. RoHS: yes. Series: TrenchFET. Switch-off delay tf[nsec.]: 25 ns. Switch-on time ton [nsec.]: 11 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 22:31