N-channel transistor SI2304DDS-T1-GE3, SOT-23, 30 v. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Ciss Gate Capacitance [pF]: 235pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 3.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 2.2V. Manufacturer's marking: P4. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.7W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 75 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/02/2025, 22:31