N-channel transistor SGP30N60, TO-220, 30A, TO-220AC, 600V
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N-channel transistor SGP30N60, TO-220, 30A, TO-220AC, 600V. Housing: TO-220. Housing (JEDEC standard): -. Ic(T=100°C): 30A. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 1600pF. CE diode: no. Channel type: N. Collector current Ic [A]: 41A. Collector current: 41A. Collector peak current Ip [A]: 112A. Collector-emitter voltage Uce [V]: 600V. Component family: IGBT transistor. Conditioning unit: 50. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 150pF. Function: Motor controls, Inverter. Gate breakdown voltage Ugs [V]: 5V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 112A. Manufacturer's marking: G30N60. Marking on the case: G30N60. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 250W. Maximum saturation voltage VCE(sat): 2.4V. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 250W. RoHS: yes. Saturation voltage VCE(sat): 1.7V. Switch-off delay tf[nsec.]: 349 ns. Switch-on time ton [nsec.]: 53 ns. Td(off): 291 ns. Td(on): 44 ns. Technology: Fast IGBT in NPT technology. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:14