N-channel transistor SGH30N60RUFD, 30A, TO-3PN ( 2-16C1B ), TO-3PN, 600V. Ic(T=100°C): 30A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 1970pF. CE diode: yes. Channel type: N. Collector current: 48A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 310pF. Function: High Speed ​​IGBT. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 90A. Marking on the case: G30N60RUFD. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 235W. RoHS: yes. Saturation voltage VCE(sat): 2.2V. Spec info: Ic 48A @ 25°C, 30A @ 110°C, Icm 90A (pulsed). Td(off): 54 ns. Td(on): 30 ns. Trr Diode (Min.): 50 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 08:14