N-channel transistor RSS095N05, 9.5A, 1uA, 0.011 Ohms, SO, SO-8, 45V

N-channel transistor RSS095N05, 9.5A, 1uA, 0.011 Ohms, SO, SO-8, 45V

Quantity
Unit price
1-4
2.44$
5-49
2.12$
50-99
1.92$
100+
1.73$
Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 11

N-channel transistor RSS095N05, 9.5A, 1uA, 0.011 Ohms, SO, SO-8, 45V. ID (T=25°C): 9.5A. Idss (max): 1uA. On-resistance Rds On: 0.011 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 45V. Assembly/installation: surface-mounted component (SMD). C(in): 1830pF. Channel type: N. Cost): 410pF. Drain-source protection: yes. Function: power switching, DC/DC converters, inverters. G-S Protection: yes. Gate/source voltage Vgs: 20V. Id(imp): 35A. Marking on the case: TB. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Quantity per case: 1. RoHS: yes. Td(off): 78 ns. Td(on): 20 ns. Technology: 4V Drive N-ch MOSFET. Temperature: +150°C. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: ROHM. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
RSS095N05
27 parameters
ID (T=25°C)
9.5A
Idss (max)
1uA
On-resistance Rds On
0.011 Ohms
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
45V
Assembly/installation
surface-mounted component (SMD)
C(in)
1830pF
Channel type
N
Cost)
410pF
Drain-source protection
yes
Function
power switching, DC/DC converters, inverters
G-S Protection
yes
Gate/source voltage Vgs
20V
Id(imp)
35A
Marking on the case
TB
Number of terminals
8
Pd (Power Dissipation, Max)
2W
Quantity per case
1
RoHS
yes
Td(off)
78 ns
Td(on)
20 ns
Technology
4V Drive N-ch MOSFET
Temperature
+150°C
Type of transistor
MOSFET
Vgs(th) min.
1V
Original product from manufacturer
ROHM