N-channel transistor RJP30E4, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 360V. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Collector/emitter voltage Vceo: 360V. Assembly/installation: surface-mounted component (SMD). C(in): 85pF. CE diode: no. Channel type: N. Collector current: 30A. Cost): 40pF. Function: IGBT. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 30 v. Germanium diode: no. Ic(pulse): 250A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Saturation voltage VCE(sat): 1.6V. Spec info: 150ns, 30W, 40A. Td(off): 90 ns. Td(on): 40 ns. Original product from manufacturer: Renesas Technology. Quantity in stock updated on 10/31/2025, 08:13