N-channel transistor RJH30H2DPK-M0, TO-3PN ( 2-16C1B ), TO-3PSG, 300V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 300V. Assembly/installation: PCB through-hole mounting. C(in): 1200pF. CE diode: yes. Channel type: N. Collector current: 35A. Compatibility: Samsung PS42C450B1WXXU. Cost): 80pF. Function: High Speed ​​Power Switching. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 30 v. Germanium diode: no. Ic(pulse): 250A. Maximum saturation voltage VCE(sat): 1.9V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Saturation voltage VCE(sat): 1.4V. Spec info: trr 0.06us. Td(off): 0.06 ns. Td(on): 0.02 ns. Technology: Trench gate and thin wafer technology G6H-II ser. Trr Diode (Min.): 23 ns. Original product from manufacturer: Renesas Technology. Quantity in stock updated on 10/31/2025, 08:13