N-channel transistor RJH3047DPK, TO-3PN ( 2-16C1B ), TO-3PSG, 330V

N-channel transistor RJH3047DPK, TO-3PN ( 2-16C1B ), TO-3PSG, 330V

Quantity
Unit price
1-4
15.60$
5-9
14.68$
10-24
13.55$
25+
12.45$
Quantity in stock: 15

N-channel transistor RJH3047DPK, TO-3PN ( 2-16C1B ), TO-3PSG, 330V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 330V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current: 35A. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 30 v. Germanium diode: no. Ic(pulse): 250A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Saturation voltage VCE(sat): 1.6V. Spec info: trr 0.1us. Td(off): 60 ns. Td(on): 20 ns. Trr Diode (Min.): 23 ns. Original product from manufacturer: Renesas Technology. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
RJH3047DPK
22 parameters
Housing
TO-3PN ( 2-16C1B )
Housing (according to data sheet)
TO-3PSG
Collector/emitter voltage Vceo
330V
Assembly/installation
PCB through-hole mounting
CE diode
yes
Channel type
N
Collector current
35A
Gate/emitter voltage VGE(th) min.
2.5V
Gate/emitter voltage VGE(th)max.
5V
Gate/emitter voltage VGE
30 v
Germanium diode
no
Ic(pulse)
250A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
60W
RoHS
yes
Saturation voltage VCE(sat)
1.6V
Spec info
trr 0.1us
Td(off)
60 ns
Td(on)
20 ns
Trr Diode (Min.)
23 ns
Original product from manufacturer
Renesas Technology