N-channel transistor RFP70N06, TO-220, 60V, 52A, 70A, 25uA, 0.014 Ohms, TO-220, 60V
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N-channel transistor RFP70N06, TO-220, 60V, 52A, 70A, 25uA, 0.014 Ohms, TO-220, 60V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. ID (T=100°C): 52A. ID (T=25°C): 70A. Idss (max): 25uA. On-resistance Rds On: 0.014 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 2250pF. Channel type: N. Ciss Gate Capacitance [pF]: 2250pF. Component family: MOSFET, N-MOS. Conditioning unit: 50. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 792pF. Drain current Id (A) @ 25°C: 70A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 70A. Drain-source protection: yes. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Manufacturer's marking: RFP70N06. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Spec info: Temperature Compensated PSPICE® Model. Switch-off delay tf[nsec.]: 32 ns. Switch-on time ton [nsec.]: 10 ns. Td(off): 32 ns. Td(on): 10 ns. Technology: MegaFET process, Power MOSFET. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 08:13