N-channel transistor RFP12N10L, 10A, 12A, 50uA, 0.20 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=25°C): 12A. Idss (max): 50uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 900pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 325pF. Drain-source protection: yes. Function: N MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 10V. IDss (min): 1uA. Id(imp): 30A. Marking on the case: F12N10L. Number of terminals: 3. Operating temperature: -55...+155°C. Pd (Power Dissipation, Max): 60W. Quantity per case: 1. RoHS: yes. Spec info: N-Channel Logic Level Power MOSFET. Td(off): 100 ns. Td(on): 15 ns. Technology: MegaFET process, Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:29