N-channel transistor PSMN035-150P, 36A, 50A, 500uA, 30 milliOhms, TO-220, TO-220AB ( SOT78 ), 150V

N-channel transistor PSMN035-150P, 36A, 50A, 500uA, 30 milliOhms, TO-220, TO-220AB ( SOT78 ), 150V

Quantity
Unit price
1-4
3.62$
5-24
3.20$
25-49
2.71$
50+
2.43$
Obsolete product, soon to be removed from the catalog
Out of stock

N-channel transistor PSMN035-150P, 36A, 50A, 500uA, 30 milliOhms, TO-220, TO-220AB ( SOT78 ), 150V. ID (T=100°C): 36A. ID (T=25°C): 50A. Idss (max): 500uA. On-resistance Rds On: 30 milliOhms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 150V. Assembly/installation: PCB through-hole mounting. C(in): 4720pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 456pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.05uA. Id(imp): 200A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 250W. Quantity per case: 1. RoHS: yes. Spec info: IDM--200A (Tmb 25°C; pulsed). Td(off): 79 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Trr Diode (Min.): 118 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 10/31/2025, 09:29

Technical documentation (PDF)
PSMN035-150P
32 parameters
ID (T=100°C)
36A
ID (T=25°C)
50A
Idss (max)
500uA
On-resistance Rds On
30 milliOhms
Housing
TO-220
Housing (according to data sheet)
TO-220AB ( SOT78 )
Voltage Vds(max)
150V
Assembly/installation
PCB through-hole mounting
C(in)
4720pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
456pF
Drain-source protection
diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.05uA
Id(imp)
200A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
250W
Quantity per case
1
RoHS
yes
Spec info
IDM--200A (Tmb 25°C; pulsed)
Td(off)
79 ns
Td(on)
25 ns
Technology
'enhancement mode field-effect transistor'
Trr Diode (Min.)
118 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
Philips Semiconductors