N-channel transistor PSMN013-100BS-118, 47A, 68A, 100uA, 13.9m Ohms, D2PAK ( TO-263 ), D2PAK (SOT404), 100V

N-channel transistor PSMN013-100BS-118, 47A, 68A, 100uA, 13.9m Ohms, D2PAK ( TO-263 ), D2PAK (SOT404), 100V

Quantity
Unit price
1-4
2.14$
5-9
1.92$
10-24
1.77$
25-49
1.64$
50+
1.46$
Quantity in stock: 54

N-channel transistor PSMN013-100BS-118, 47A, 68A, 100uA, 13.9m Ohms, D2PAK ( TO-263 ), D2PAK (SOT404), 100V. ID (T=100°C): 47A. ID (T=25°C): 68A. Idss (max): 100uA. On-resistance Rds On: 13.9m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK (SOT404). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 3195pF. Channel type: N. Cost): 221pF. Drain-source protection: yes. Function: standard switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.06uA. Id(imp): 272A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 170W. Quantity per case: 1. RoHS: yes. Td(off): 52.5 ns. Td(on): 20.7 ns. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 10/31/2025, 09:29

PSMN013-100BS-118
28 parameters
ID (T=100°C)
47A
ID (T=25°C)
68A
Idss (max)
100uA
On-resistance Rds On
13.9m Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK (SOT404)
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
3195pF
Channel type
N
Cost)
221pF
Drain-source protection
yes
Function
standard switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.06uA
Id(imp)
272A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
170W
Quantity per case
1
RoHS
yes
Td(off)
52.5 ns
Td(on)
20.7 ns
Trr Diode (Min.)
52 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
Nxp Semiconductors