N-channel transistor PMV213SN, SOT-23, TO-236AB, 100V
Quantity
Unit price
1-24
0.65$
25+
0.53$
| Quantity in stock: 249 |
N-channel transistor PMV213SN, SOT-23, TO-236AB, 100V. Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 330pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 1.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: PMV213SN. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 9.5 ns. Switch-on time ton [nsec.]: 5.5 ns. Original product from manufacturer: Nxp. Quantity in stock updated on 11/02/2025, 22:25
PMV213SN
17 parameters
Housing
SOT-23
Housing (JEDEC standard)
TO-236AB
Drain-source voltage Uds [V]
100V
Ciss Gate Capacitance [pF]
330pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
1.9A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.25 Ohms @ 0.5A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
PMV213SN
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
9.5 ns
Switch-on time ton [nsec.]
5.5 ns
Original product from manufacturer
Nxp