N-channel transistor P2804BDG, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V

N-channel transistor P2804BDG, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V

Quantity
Unit price
1-4
1.74$
5-24
1.44$
25-49
1.21$
50+
1.07$
Quantity in stock: 779

N-channel transistor P2804BDG, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss: 1uA. Idss (max): 10A. On-resistance Rds On: 0.03 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 790pF. Channel type: N. Cost): 175pF. Drain-source protection: no. Function: Logic Level Enhancement. G-S Protection: no. Id(imp): 40A. Pd (Power Dissipation, Max): 32W. Quantity per case: 1. RoHS: yes. Td(off): 11.8 ns. Td(on): 2.2 ns. Technology: Field Effect Transistor. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Original product from manufacturer: Niko-semi. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
P2804BDG
25 parameters
ID (T=100°C)
8A
ID (T=25°C)
10A
Idss
1uA
Idss (max)
10A
On-resistance Rds On
0.03 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( D-PAK )
Voltage Vds(max)
40V
Assembly/installation
surface-mounted component (SMD)
C(in)
790pF
Channel type
N
Cost)
175pF
Drain-source protection
no
Function
Logic Level Enhancement
G-S Protection
no
Id(imp)
40A
Pd (Power Dissipation, Max)
32W
Quantity per case
1
RoHS
yes
Td(off)
11.8 ns
Td(on)
2.2 ns
Technology
Field Effect Transistor
Trr Diode (Min.)
15.5 ns
Type of transistor
MOSFET
Original product from manufacturer
Niko-semi