N-channel transistor NTD3055L104G, D-PAK ( TO-252 ), TO-252, 60V, 12A, 10uA, 0.089 Ohms, TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V

N-channel transistor NTD3055L104G, D-PAK ( TO-252 ), TO-252, 60V, 12A, 10uA, 0.089 Ohms, TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V

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N-channel transistor NTD3055L104G, D-PAK ( TO-252 ), TO-252, 60V, 12A, 10uA, 0.089 Ohms, TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V. Housing: D-PAK ( TO-252 ). Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.089 Ohms. Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 316pF. Channel type: N. Ciss Gate Capacitance [pF]: 440pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Cost): 105pF. Drain current Id (A) @ 25°C: 12A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.104 Ohms @ 6A. Drain-source protection: yes. Function: logic level, ID pulse 45A/10us. G-S Protection: no. Gate breakdown voltage Ugs [V]: 2V. Gate/source voltage Vgs: 15V. IDss (min): 1uA. Id(imp): 45A. Manufacturer's marking: 55L104G. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 48W. Note: screen printing/SMD code 55L104G. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 40 ns. Switch-on time ton [nsec.]: 20 ns. Td(off): 19 ns. Td(on): 9.2 ns. Technology: Power MOSFET. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
NTD3055L104G
42 parameters
Housing
D-PAK ( TO-252 )
Housing (JEDEC standard)
TO-252
Drain-source voltage Uds [V]
60V
ID (T=25°C)
12A
Idss (max)
10uA
On-resistance Rds On
0.089 Ohms
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
316pF
Channel type
N
Ciss Gate Capacitance [pF]
440pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Cost)
105pF
Drain current Id (A) @ 25°C
12A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.104 Ohms @ 6A
Drain-source protection
yes
Function
logic level, ID pulse 45A/10us
G-S Protection
no
Gate breakdown voltage Ugs [V]
2V
Gate/source voltage Vgs
15V
IDss (min)
1uA
Id(imp)
45A
Manufacturer's marking
55L104G
Max temperature
+175°C.
Maximum dissipation Ptot [W]
48W
Note
screen printing/SMD code 55L104G
Number of terminals
3
Pd (Power Dissipation, Max)
48W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
40 ns
Switch-on time ton [nsec.]
20 ns
Td(off)
19 ns
Td(on)
9.2 ns
Technology
Power MOSFET
Trr Diode (Min.)
35 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
ON Semiconductor