N-channel transistor NP82N055PUG, 82A, 1uA, 4.1m Ohms, D2PAK ( TO-263 ), MP-25ZP, 55V. ID (T=25°C): 82A. Idss (max): 1uA. On-resistance Rds On: 4.1m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): MP-25ZP. Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 6400pF. Channel type: N. Conditioning unit: 900. Conditioning: roll. Cost): 465pF. Drain-source protection: diode. Function: Ultra Low On-Resistance. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 328A. Marking on the case: 82N055. Number of terminals: 2. Pd (Power Dissipation, Max): 142W. Quantity per case: 1. RoHS: yes. Spec info: MOSFET Transistor. Td(off): 72 ns. Td(on): 40 ns. Technology: MOSFET Transistor. Temperature: +175°C. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Renesas Technology. Quantity in stock updated on 10/31/2025, 09:27