N-channel transistor NDS355AN, SOT-23, 30 v

N-channel transistor NDS355AN, SOT-23, 30 v

Quantity
Unit price
1-24
1.04$
25+
0.63$
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Quantity in stock: 3047

N-channel transistor NDS355AN, SOT-23, 30 v. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 30 v. Assembly/installation: SMD. Charge: 5nC. Ciss Gate Capacitance [pF]: 195pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 1.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.125 Ohms @ 1.7A. Drain current: 1.7A. Drain-source voltage: 30V. Gate breakdown voltage Ugs [V]: 2V. Gate-source voltage: ±20V. Manufacturer's marking: NDS355AN_NL. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Number of terminals: 3. Polarity: unipolar. Power: 0.5W. Properties of semiconductor: Logic Level. RoHS: yes. Switch-off delay tf[nsec.]: 25 ns. Switch-on time ton [nsec.]: 20 ns. Type of transistor: N-MOSFET, logic level. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 23:36

Technical documentation (PDF)
NDS355AN
25 parameters
Housing
SOT-23
Drain-source voltage Uds [V]
30 v
Assembly/installation
SMD
Charge
5nC
Ciss Gate Capacitance [pF]
195pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
1.7A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.125 Ohms @ 1.7A
Drain current
1.7A
Drain-source voltage
30V
Gate breakdown voltage Ugs [V]
2V
Gate-source voltage
±20V
Manufacturer's marking
NDS355AN_NL
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.5W
Number of terminals
3
Polarity
unipolar
Power
0.5W
Properties of semiconductor
Logic Level
RoHS
yes
Switch-off delay tf[nsec.]
25 ns
Switch-on time ton [nsec.]
20 ns
Type of transistor
N-MOSFET, logic level
Original product from manufacturer
Onsemi (fairchild)