| Obsolete product, soon to be removed from the catalog. Last items available | |
| Quantity in stock: 285 |
N-channel transistor NDB6030L, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v
Quantity
Unit price
1-4
1.47$
5-49
1.22$
50-99
1.02$
100+
0.92$
| Equivalence available | |
| Quantity in stock: 65 |
N-channel transistor NDB6030L, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: N. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. Technology: Field Effect Power MOSFET. Type of transistor: MOSFET. Original product from manufacturer: National Semiconductor. Quantity in stock updated on 10/31/2025, 09:27
NDB6030L
15 parameters
ID (T=25°C)
52A
Idss (max)
52A
On-resistance Rds On
0.011 Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Function
Logic Level Enhancement Mode
Id(imp)
156A
Pd (Power Dissipation, Max)
75W
Quantity per case
1
Technology
Field Effect Power MOSFET
Type of transistor
MOSFET
Original product from manufacturer
National Semiconductor