N-channel transistor MTY100N10E, TO-264, 100V. Housing: TO-264. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 10640pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 100A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 50A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: MTY100N10E. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 300W. Number of terminals: 3. RoHS: no. Switch-off delay tf[nsec.]: 372 ns. Switch-on time ton [nsec.]: 96 ns. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/02/2025, 19:01