N-channel transistor MMBF170LT1G, SOT-23, TO-236AB, 60V
Quantity
Unit price
1-99
0.25$
100-999
0.19$
1000-2999
0.12$
3000+
0.11$
| Quantity in stock: 8074 |
N-channel transistor MMBF170LT1G, SOT-23, TO-236AB, 60V. Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 60V. Ciss Gate Capacitance [pF]: 60pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: 6Z. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.225W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 10 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/02/2025, 22:31
MMBF170LT1G
17 parameters
Housing
SOT-23
Housing (JEDEC standard)
TO-236AB
Drain-source voltage Uds [V]
60V
Ciss Gate Capacitance [pF]
60pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
0.5A
Drain current through resistor Rds [Ohm] @ Ids [A]
5 Ohms @ 0.2A
Gate breakdown voltage Ugs [V]
3V
Manufacturer's marking
6Z
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.225W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
10 ns
Switch-on time ton [nsec.]
10 ns
Original product from manufacturer
Onsemi