N-channel transistor MDF9N60TH, 5.7A, 9A, 1uA, 0.65 Ohms, TO-220FP, TO220F, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 1uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1160pF. Channel type: N. Cost): 134pF. Drain-source protection: yes. Function: SMPS, high Speed switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 32A. Marking on the case: MDF9N60. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 48W. RoHS: yes. Spec info: Ultra Low Gate Charge. Td(off): 48 ns. Td(on): 31 ns. Technology: Cool Mos POWER transistor. Trr Diode (Min.): 360ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Magnachip Semiconductor. Quantity in stock updated on 10/31/2025, 08:52