N-channel transistor MDF11N65B, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 650V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 1650pF. Channel type: N. Cost): 180pF. Drain-source protection: yes. Function: SMPS, high Speed switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 48A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 49.6W. RoHS: yes. Spec info: Ultra Low Gate Charge. Td(off): 132 ns. Td(on): 27 ns. Technology: Cool Mos POWER transistor. Trr Diode (Min.): 355 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Magnachip Semiconductor. Quantity in stock updated on 10/31/2025, 08:52