N-channel transistor MBQ60T65PES, 60A, TO-247, TO-247, 650V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 650V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current: 100A. Conditioning unit: 30. Conditioning: plastic tube. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 180A. Marking on the case: 60T65PES. Maximum saturation voltage VCE(sat): 2.4V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 535W. RoHS: yes. Saturation voltage VCE(sat): 1.85V. Td(off): 142ns. Td(on): 45 ns. Technology: High Speed Fieldstop Trench IGBT, Second Generation. Original product from manufacturer: Magnachip Semiconductor. Quantity in stock updated on 10/31/2025, 08:52