N-channel transistor J112, TO-92, 5mA, TO-92 Ammo-Pak, 35V
Quantity
Unit price
1-4
0.43$
5-24
0.36$
25-49
0.32$
50-99
0.28$
100+
0.22$
| +100 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Quantity in stock: 300 |
N-channel transistor J112, TO-92, 5mA, TO-92 Ammo-Pak, 35V. Housing: TO-92. Idss (max): 5mA. Housing (according to data sheet): TO-92 Ammo-Pak. Voltage Vds(max): 35V. Assembly/installation: PCB through-hole mounting. C(in): 28pF. Channel type: N. Cost): 5pF. Drain current: 5mA. Function: Up 4.5V. Gate-source voltage: -35V. Gate/source voltage (off) max.: 5V. Gate/source voltage (off) min.: 1V. IGF: 50mA. On-state resistance: 50 Ohms. Operating temperature: -55...+150°C. Packaging: -. Pd (Power Dissipation, Max): 0.625W. Polarity: unipolar. Power: 350mW. Quantity per case: 1. RoHS: yes. Trip current: 50mA. Type of transistor: N-JFET. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 07:04
J112
24 parameters
Housing
TO-92
Idss (max)
5mA
Housing (according to data sheet)
TO-92 Ammo-Pak
Voltage Vds(max)
35V
Assembly/installation
PCB through-hole mounting
C(in)
28pF
Channel type
N
Cost)
5pF
Drain current
5mA
Function
Up 4.5V
Gate-source voltage
-35V
Gate/source voltage (off) max.
5V
Gate/source voltage (off) min.
1V
IGF
50mA
On-state resistance
50 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Polarity
unipolar
Power
350mW
Quantity per case
1
RoHS
yes
Trip current
50mA
Type of transistor
N-JFET
Original product from manufacturer
Fairchild